Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R
| 晶体管类型 | NPN - 预偏压 |
|---|
| 电流 - 集电极（Ic）（最大值） | 100mA |
|---|
| 电压 - 集射极击穿（最大值） | 50V |
|---|
| 电阻器 - 基底（R1）（欧姆） | 10k |
|---|
| 电阻器 - 发射极基底（R2）（欧姆） | 10k |
|---|
| 不同 Ic，Vce 时的 DC 电流增益（hFE）（最小值） | 35 @ 5mA，10V |
|---|
| 不同 Ib，Ic 时的 Vce 饱和值（最大值） | 250mV @ 300μA，10mA |
|---|
| 电流 - 集电极截止（最大值） | 500nA |
|---|
| 频率 - 跃迁 | - |
|---|
| 功率 - 最大值 | 246mW |
|---|
| 安装类型 | 表面贴装 |
|---|
| 封装/外壳 | TO-236-3，SC-59，SOT-23-3 |
|---|
| 供应商器件封装 | SOT-23-3（TO-236） |
|---|
>
--官网介绍--
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
特性
- Simplifies Circuit Design
|
|
|
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
|
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
|
官网链接：https://www.onsemi.cn/PowerSolutions/product.do?id=MMUN2211L
| 参数名称 | 参数值 |
|---|
| 额定功率 | 246mW |
| 集电极电流Ic | 100mA |
| 集射极击穿电压Vce | 50V |
| 晶体管类型 | NPN - 预偏压 |
