2SA1611 TRANSISTOR (PNP) SOT323
2SA1611 TRANSISTOR (PNP)
FEATURES
lHigh DC Current Gain
lHigh Voltage
lComplementary to 2SC4177
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | -60 | V |
VCEO | Collector-Emitter Voltage | -50 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current | -100 | mA |
PC | Collector Power Dissipation | 150 | mW |
RΘJA | Thermal Resistance From Junction To Ambient | 833 | ℃/W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55～+150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
Collector-base breakdown voltage | V(BR)CBO | IC=-100?A, IE=0 | -60 | V | | |
Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -50 | V | | |
Emitter-base breakdown voltage | V(BR)EBO | IE=-100?A, IC=0 | -5 | V | | |
Collector cut-off current | ICBO | VCB=-60V, IE=0 | -100 | nA | | |
Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | | |
DC current gain | hFE* | VCE=-6V, IC=-1mA | 90 | 600 | | |
Collector-emitter saturation voltage | VCE(sat) | IC=-100mA, IB=-10mA | -0.3 | V | | |
Collector-emitter voltage | VBE | VCE=-6V, IC=-1mA | -0.58 | -0.68 | V | |
Transition frequency | fT | VCE=-6V,Ic=-10mA | 180 | MHz | | |
Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 4.5 | pF | | |
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE
RANK | M4 | M5 | M6 | M7 |
RANGE | 90–180 | 135–270 | 200–400 | 300–600 |
MARKING | M4 | M5 | M6 | M7 |
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| 参数名称 | 参数值 |
|---|
| 额定功率 | 150mW |
| 集电极电流Ic | 100mA |
| 集射极击穿电压Vce | 50V |
| 晶体管类型 | PNP |
